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PD - 93789A
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level IRHF57130 100K Rads (Si) IRHF53130 300K Rads (Si) IRHF54130 IRHF58130 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.08 0.08 0.08 0.10 ID 11.7A 11.7A 11.7A 11.7A
IRHF57130 100V, N-CHANNEL
R5
TECHNOLOGY
TO-39
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 11.7 7.4 47 25 0.2 20 173 11.7 2.5 4.9 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063 in./1.6mm from case for 10s) 0.98 (Typical)
g
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1
3/2/00
IRHF57130
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
100 -- -- 2.0 8.7 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.12 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 -- -- 0.08 4.0 -- 10 25 100 -100 50 7.4 20 25 100 35 30 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 7.4A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 7.4A VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 11.7A VDS = 50V VDD = 50V, ID = 11.7A RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA
nC
ns
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1038 362 45
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 11.7 47 1.5 202 982
Test Conditions
A
V ns C Tj = 25C, IS = 11.7A, VGS = 0V Tj = 25C, IF = 11.7A, di/dt 100A/s VDD 25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 5.0 175
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHF57130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-39) Diode Forward Voltage Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 100 2.0 -- -- -- -- -- -- -- 4.0 100 -100 10 0.064 0.08 1.5 100 1.5 -- -- -- -- -- -- -- 4.0 100 -100 10 0.08 0.10 1.5 V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 80V, VGS =0V VGS = 12V, ID =7.4A VGS = 12V, ID =7.4A VGS = 0V, IS = 11.7A
1. Part numbers IRHF57130, IRHF53130 and IRHF54130 2. Part number IRHF58130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET (MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 100 100 100 100 100 32.5 100 100 100 35 25 28.4 100 100 80 25 --
120 100 80 VGS 60 40 20 0 0 -5 -10 VDS -15 -20 Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHF57130
Pre-Irradiation
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
10
10
5.0V
5.0V
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100 1 0.1 1
20s PULSE WIDTH TJ = 150 C
10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
TJ = 25 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 11.7A
I D , Drain-to-Source Current (A)
2.0
100
TJ = 150 C
1.5
1.0
10
0.5
1 5 7 9
V DS = 15 50V 20s PULSE WIDTH 11 13 15
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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Pre-Irradiation
IRHF57130
2000
1600
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 11.7A
16
VDS = 80V VDS = 50V VDS = 20V
C, Capacitance (pF)
1200
Ciss
12
800
Coss
8
400
4
Crss
0 1 10 100
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
TJ = 25 C
ISD , Reverse Drain Current (A)
10
ID, Drain Current (A)
TJ = 150 C
100
OPERATION IN THIS AREA LIMITED BY RDS(ON)
10
1
1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 10ms
0.1 0.0
V GS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHF57130
Pre-Irradiation
12
VDS VGS RG
RD
10
D.U.T.
+
I D , Drain Current (A)
8
-VDD
12V
6
Pulse Width 1 s Duty Factor 0.1 %
4
Fig 10a. Switching Time Test Circuit
VDS 90%
2
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10
1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHF57130
400
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
320
ID 5.2A 7.4A BOTTOM 11.7A TOP
VD S
L
D R IV E R
240
RG
D .U .T.
IA S
+ - VD D
A
160
12V 20V
tp
0 .0 1
80
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D S S tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHF57130
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 50V, starting TJ = 25C, L= 2.53 mH Peak IL = 11.7A, VGS = 12V ISD 11.7A, di/dt 216A/s, VDD 100V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-205AF (Modified TO-39)
LEGEND 1- SOURCE 2- GATE 3- DRAIN
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